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Updated: May 31, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Improved infrared photoluminescence characteristics from circularly ordered self-assembled Ge islands
Samaresh Das1, Kaustuv Das, Raj Kumar Singha
1Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302, India. physkr@phy.iitkgp.ernet.in.
Abstract:
The formation of circularly ordered Ge-islands on Si(001) has been achieved because of nonuniform strain field around the periphery of the holes patterned by focused ion beam in combination with a self-assembled growth using molecular beam epitaxy. The photoluminescence (PL) spectra obtained from patterned areas (i.e., ordered islands) show a significant signal enhancement, which sustained till 200 K, without any vertical stacking of islands. The origin of two activation energies in temperature-dependent PL spectra of the ordered islands has been explained in detail.

