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Gate voltage dependent characteristics of p-n diodes and bipolar transistors based on multiwall CN(x)/carbon nanotube

W J Zhang1, Q F Zhang, Y Chai

  • 1Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People's Republic of China.

Nanotechnology
|July 7, 2011
PubMed

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