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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

J Tatebayashi1, B L Liang, R B Laghumavarapu

  • 1Electrical Engineering and California NanoSystems Institute, University of California, Los Angeles, 420 Westwood Plaza, Los Angeles, CA 90095, USA.

Nanotechnology
|July 7, 2011
PubMed

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