Related Experiment Video
Updated: May 30, 2026

Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Metal-insulator transition in ultrathin LaNiO3 films
R Scherwitzl1, S Gariglio, M Gabay
1DPMC, University of Geneva, Genève, Switzerland. raoul.scherwitzl@unige.ch
Abstract:
Transport in ultrathin films of LaNiO(3) evolves from a metallic to a strongly localized character as the film's thickness is reduced and the sheet resistance reaches a value close to h/e(2), the quantum of resistance in two dimensions. In the intermediate regime, quantum corrections to the Drude low-temperature conductivity are observed; they are accurately described by weak localization theory. Remarkably, the negative magnetoresistance in this regime is isotropic, which points to magnetic scattering associated with the proximity of the system to either a spin-glass state or the charge ordered antiferromagnetic state observed in other rare earth nickelates.
More Related Videos
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Properties of Transition Metals
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
Bonding in Metals

