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Spin-Orbit Semimetal SrIrO_{3} in the Two-Dimensional Limit.

D J Groenendijk1, C Autieri2, J Girovsky1

  • 1Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft, Netherlands.

Physical Review Letters
|January 6, 2018
PubMed
Summary

Ultrathin strontium iridate (SrIrO3) films transition from semimetallic to insulating states below 4 unit cells. This transition is driven by enhanced spin fluctuations and requires antiferromagnetic order for gap opening.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Solid State Physics

Background:

  • Strontium iridate (SrIrO3) is a correlated oxide material exhibiting complex electronic behaviors.
  • Understanding thickness-dependent properties is crucial for tuning material functionalities.

Purpose of the Study:

  • To investigate the electronic properties of ultrathin SrIrO3 films.
  • To identify the critical thickness for electronic phase transitions.
  • To elucidate the role of spin fluctuations and magnetic order in these transitions.

Main Methods:

  • Variable thickness thin film growth of SrIrO3.
  • Low-temperature magnetoconductance measurements.
  • Scanning tunneling spectroscopy (STS).
  • Density functional theory (DFT) calculations.

Main Results:

  • A transition from a semimetallic to a correlated insulating state was observed below 4 unit cells of SrIrO3.
  • Spin fluctuations significantly increase as the transition point is approached.
  • STS measurements indicate SrIrO3 at 4 unit cells is near a band gap opening.
  • DFT calculations confirm the critical thickness and the necessity of antiferromagnetic order for gap opening.

Conclusions:

  • The electronic properties of ultrathin SrIrO3 are strongly thickness-dependent.
  • Spin fluctuations play a critical role in the semimetal-to-insulator transition.
  • Antiferromagnetic order is essential for the emergence of the insulating state in ultrathin SrIrO3.