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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Thermally limited current carrying ability of graphene nanoribbons
Albert D Liao1, Justin Z Wu, Xinran Wang
1Department of Electrical & Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA.
Abstract:
We investigate high-field transport in graphene nanoribbons (GNRs) on SiO(2), up to breakdown. The maximum current density is limited by self-heating, but can reach >3 mA/μm for GNRs ~15 nm wide. Comparison with larger, micron-sized graphene devices reveals that narrow GNRs benefit from 3D heat spreading into the SiO(2), which enables their higher current density. GNRs also benefit from lateral heat flow to the contacts in short devices (<~0.3 μm), which allows extraction of a median GNR thermal conductivity (TC), ~80 W m(-1)K(-1) at 20 °C across our samples, dominated by phonons. The TC of GNRs is an order of magnitude lower than that of micron-sized graphene on SiO(2), suggesting strong roles of edge and defect scattering, and the importance of thermal dissipation in small GNR devices.
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Boundary Conditions for Current Density

