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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
1Quantum Dot Research Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan. JO.Masafumi@nims.go.jp
Nanotechnology
|July 22, 2011
Summary
We achieved electrically injected lasing in Gallium Arsenide quantum dots (QDs) using droplet epitaxy. These high-quality, uniform QDs enabled ground-state lasing in a laser diode at low temperatures.
Area of Science:
- Semiconductor Physics
- Materials Science
- Optoelectronics
Background:
- Gallium Arsenide (GaAs) quantum dots (QDs) are promising for optoelectronic devices.
- Achieving high-quality, uniform QDs is crucial for device performance.
- Droplet epitaxy is a method for QD fabrication.
Purpose of the Study:
- To report electrically injected lasing in GaAs quantum dots grown by droplet epitaxy.
- To demonstrate improved growth techniques for high-quality GaAs QDs.
- To characterize the optical properties and lasing behavior of these QDs.
Main Methods:
- Utilized droplet epitaxy for GaAs QD growth on GaAs(001).
- Employed improved growth techniques: 2D layer insertion, controlled As flux, AlGaAs capping, and high-temperature annealing.
- Fabricated a laser diode with fivefold-stacked QD layers.
- Performed low-temperature, pulsed operation measurements.
Main Results:
- Formed high-quality GaAs QDs with superior uniformity.
- Observed ultra-narrow luminescence with a linewidth of 20 meV.
- Achieved ground-state lasing in the QD laser diode.
Conclusions:
- Electrically injected lasing is demonstrated in GaAs QDs grown by droplet epitaxy.
- The improved growth techniques yield high-quality, uniform QDs suitable for lasing.
- These results highlight the potential of GaAs QDs for laser applications.
