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Published on: February 11, 2020
Selective adsorption of organosilane molecules along step edges of atomically flattened Si(111) surfaces
Hiroki Sakane1, Akina Yoshimatsu, Takushi Shigetoshi
1Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan.
Abstract:
We investigate the selective adsorption of organosilane molecules (3-aminopropyltriethoxysilane (APTES) and octadecyltrichlorosilane (OTS)) at the step edges of a flattened Si(111) surface by atomic force microscopy. The flattened Si(111) surface is formed by dipping a vicinal Si(111) wafer into ultralow-dissolved-oxygen water after treatment with HF. The selective adsorption of these organosilanes is achieved only when the Si(111) sample is pretreated with a Cu-containing solution to form Cu wires along the step edges of the Si(111) surface. This is probably due to the simultaneous formation of one-dimensional Si oxide covered with hydroxyl (OH) groups underneath Cu wires during the electroless reduction of Cu ions in water. At the step edges, APTES and OTS molecules are adsorbed as disperse clusters and as rows of bumps, respectively. The reason for this difference is still unclear, but a key factor is probably the control of the moisture content in the environment. The step edges, which are functionalized by organosilane molecules with various terminations such as -NH2 and -CH3, are expected to be utilized in novel nanoscale devices and processes.

