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MOSFET Amplifiers

MOSFET Amplifiers

The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...

Small-Signal Analysis of MOSFET Amplifiers

Small-Signal Analysis of MOSFET Amplifiers

In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...

Voltage Doubler Circuit

Voltage Doubler Circuit

A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.

Van de Graaff Generator

Van de Graaff Generator

Van de Graaff generators (or Van de Graaffs) are devices used to demonstrate high voltage due to static electricity that can also be used for research. Robert Van de Graaff first built one in 1931 (based on original suggestions by Lord Kelvin) for use in nuclear physics research.
Van de Graaff uses both smooth and pointed surfaces, conductors, and insulators to generate large static charges and, hence, large voltages. A substantial excess charge can be deposited on the sphere because it moves...

Biasing of FET

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

MOSFET: Enhancement Mode

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Related Experiment Video

Updated: May 30, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

High-frequency graphene voltage amplifier.

Shu-Jen Han¹, Keith A Jenkins, Alberto Valdes Garcia

¹IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598, United States. sjhan@us.ibm.com

|August 3, 2011

Summary

This summary is machine-generated.

Researchers developed the first high-frequency graphene voltage amplifier. This breakthrough overcomes graphene

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Area of Science:

Electronics
Materials Science
Nanotechnology

Background:

Graphene transistors offer high frequencies but lack current saturation for RF circuits.
Zero band gap nature of graphene impedes its application in radio frequency (RF) circuits.

Purpose of the Study:

To demonstrate the first high-frequency voltage amplifier using graphene field-effect transistors (GFETs).
To overcome the challenge of current saturation in graphene for RF applications.

Main Methods:

Fabrication of a 6-finger gate GFET with a 500 nm gate length using large-area chemical vapor deposition (CVD) graphene.
Integration of an ultrathin 4 nm HfO(2) gate dielectric within embedded gate structures to achieve current saturation.
Characterization of the GFET as a common-source amplifier.

Main Results:

Demonstrated the first AC voltage gain from a GFET.
Achieved a low-frequency gain of approximately 5 dB.
Exhibited a 3 dB bandwidth exceeding 6 GHz.
Attained the highest extrinsic transconductance to date (1.2 mS/μm) for large-scale graphene FETs.

Conclusions:

The developed GFET successfully functions as a high-frequency voltage amplifier.
The ultrathin gate dielectric is crucial for achieving current saturation and enabling AC voltage gain in graphene devices.
This work paves the way for graphene-based RF circuit applications.