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Large second-harmonic generation at 1.55 μmin oxidized AlGaAs waveguides
M Savanier1, A Andronico, A Lemaître
1Université Paris Diderot, Sorbonne Paris Cité, Laboratoire Matériaux et Phénomènes Quantiques, CNRS-UMR 7162, Case courrier 7021, 75205 Paris Cedex 13, France.
Optics Letters
|August 3, 2011
Summary
We achieved efficient continuous-wave second-harmonic generation in aluminum gallium arsenide waveguides. This breakthrough in semiconductor nonlinear optics paves the way for integrated photonics in the telecom range.
Area of Science:
- Nonlinear optics
- Semiconductor materials science
- Integrated photonics
Background:
- Semiconductor waveguides are crucial for integrated photonics.
- Efficient nonlinear optical processes in waveguides are needed for advanced photonic devices.
Purpose of the Study:
- To demonstrate continuous-wave (CW) second-harmonic generation (SHG) in selectively oxidized AlGaAs multilayer waveguides.
- To achieve high conversion efficiency for frequency doubling in a semiconductor platform.
Main Methods:
- Fabrication of selectively oxidized AlGaAs multilayer waveguides.
- CW pumping at 1.55 μm wavelength.
- Measurement of second-harmonic power and conversion efficiency.
Main Results:
- Observed frequency doubling of the 1.55 μm pump.
- Achieved 2.8% W⁻¹ conversion efficiency.
- Generated a maximum second-harmonic power of approximately 0.3 mW.
Conclusions:
- Demonstrated the strongest SHG ever reported in semiconductor waveguides.
- This work is a significant step towards integrated spontaneous parametric downconversion for telecom applications.
