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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Ion beam nanopatterning in graphite: characterization of single extended defects

P Mélinon1, A Hannour, L Bardotti

  • 1Laboratoire de la Matière Condensée et Nanostructures UMR 5586, Université de Lyon, Université Lyon I et CNRS, Bâtiment Lon Brillouin, 6 rue Ampère, Domaine de la Doua, F-69622 Villeurbanne, France.

Nanotechnology
|August 10, 2011
PubMed

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A perfect crystal, in theory, has a uniform structure with the same unit cell and lattice points throughout. However, any deviation from this periodic arrangement is known as an imperfection or defect. These defects can be categorized into three types: point, line, and plane defects.Point defects occur when there is a deviation from the ideal due to missing atoms, displaced atoms, or additional atoms. These imperfections might occur due to imperfect packing during crystallization or because of...