Monolithic GaAs/InGaP nanowire light emitting diodes on silicon

Area of Science:

• Semiconductor Nanowire Technology
• Optoelectronics
• Materials Science

Background:

• Core/shell nanowires offer unique optoelectronic properties.
• Epitaxial growth on diverse substrates is crucial for device integration.
• Standard lithography enables scalable fabrication of nanodevices.

Purpose of the Study:

• To fabricate vertical light emitting diodes (LEDs) using GaAs/InGaP core/shell nanowires.
• To evaluate LED performance on Gallium Phosphide (GaP) and Silicon (Si) substrates.
• To explore the potential for on-chip optical communication applications.

Main Methods:

• Epitaxial growth of GaAs/InGaP core/shell nanowires on GaP and Si substrates.
• Fabrication of vertical LED devices using standard lithography techniques.
• Temperature-dependent photoluminescence and electroluminescence measurements for device characterization.

Main Results:

• Successful fabrication of vertical LED devices on both GaP and Si substrates.
• Demonstration of LED functionality on both types of substrates.
• Characterization of device performance through photoluminescence and electroluminescence.

Conclusions:

• Vertical LEDs based on GaAs/InGaP core/shell nanowires are feasible on GaP and Si.
• The fabrication method allows for large-area and precisely positioned devices.
• These nanowire LEDs show promise for on-chip optical communication systems.