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Related Concept Videos

Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

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Developing High Performance GaP/Si Heterojunction Solar Cells
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Gallium nitride heterostructures on 3D structured silicon.

Sönke Fündling1, Unsal Sökmen, Erwin Peiner

  • 1Institut für Halbleitertechnik, Hans-Sommer-Straße 66, 38106 Braunschweig, Germany.

Nanotechnology
|August 12, 2011
PubMed
Summary

Researchers developed high-quality, defect-reduced Gallium Nitride (GaN)-based nanoLEDs using patterned silicon substrates. This method improves material quality by minimizing substrate mismatch for advanced optoelectronic devices.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Semiconductor Physics

Background:

  • Gallium Nitride (GaN)-based heterostructures are crucial for optoelectronic devices.
  • Growing high-quality GaN on lattice-mismatched substrates like Silicon (Si) presents significant challenges.
  • Three-dimensional (3D) patterning of substrates offers a potential solution to improve material quality.

Purpose of the Study:

  • To fabricate well-controlled, high-quality, and defect-reduced GaN-based nanoLEDs.
  • To investigate the use of 3D patterned Si(111) substrates for GaN epitaxy.
  • To understand the influence of pillar dimensions on GaN growth and material properties.

Main Methods:

  • Metal Organic Vapour Phase Epitaxy (MOVPE) for GaN-based heterostructure growth.
  • Deep etching of Si(111) substrates using a low-temperature inductively coupled plasma (ICP) process.
  • Incorporation of Indium Gallium Nitride (InGaN)/GaN multi-quantum-well (MQW) structures.
  • Cathodoluminescence (CL) for spatially resolved optical analysis.

Main Results:

  • Achieved improved material quality in GaN structures grown on 3D patterned Si substrates.
  • Demonstrated controlled pillar growth with high aspect ratios, minimizing substrate influence.
  • Observed a significant dependence of GaN morphology on pillar size and pitch.
  • Analyzed optical properties using spatially resolved cathodoluminescence.

Conclusions:

  • Deep etched 3D patterned Si(111) substrates enable controlled growth of high-quality GaN.
  • The developed MOVPE process is suitable for fabricating defect-reduced GaN-based nanoLEDs.
  • Pillar morphology critically influences the properties of GaN heterostructures.