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Updated: May 30, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires
B W Jacobs1, V M Ayres, M A Crimp
1Department of Electrical and Computer Engineering, Michigan State University, East Lansing, MI 48824, USA.
Abstract:
In this paper, the internal structure of novel multiphase gallium nitride nanowires in which multiple zinc-blende and wurtzite crystalline domains grow simultaneously along the entire length of the nanowire is investigated. Orientation relationships within the multiphase nanowires are identified using high-resolution transmission electron microscopy of nanowire cross-sections fabricated with a focused ion beam system. A coherent interface between the zinc-blende and wurtzite phases is identified. A mechanism for catalyst-free vapor-solid multiphase nanowire nucleation and growth is proposed.

