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Related Experiment Video

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Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

Identifying threading dislocations in GaN films and substrates by electron channelling.

Ranga J Kamaladasa¹, Fang Liu, Lisa M Porter

¹Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA. rkamalad@andrew.cmu.edu

Journal of Microscopy

|September 3, 2011

Summary

Electron channelling contrast imaging effectively maps threading dislocations in Gallium Nitride (GaN). This technique differentiates edge-type from mixed-type dislocations, offering a widely accessible method for materials analysis.

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Last Updated: May 29, 2026

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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Area of Science:

Materials Science
Solid State Physics
Semiconductor Characterization

Background:

Threading dislocations are critical defects in Gallium Nitride (GaN) affecting device performance.
Accurate characterization of these dislocations is essential for GaN-based electronics and optoelectronics.
Existing methods for dislocation imaging can be destructive or require specialized equipment.

Purpose of the Study:

To demonstrate and validate electron channelling contrast imaging (ECCI) for analyzing threading dislocations in GaN.
To investigate the influence of imaging parameters on dislocation contrast.
To differentiate between edge-type and mixed-type threading dislocations using ECCI.

Main Methods:

Utilized a conventional scanning electron microscope (SEM) with a backscatter detector for ECCI.
Varied accelerating voltage and diffraction vector to optimize contrast.
Correlated ECCI results with transmission electron microscopy (TEM) and defect-selective etching.

Main Results:

Successfully applied ECCI to image threading dislocations in GaN substrates and epitaxial films.
Observed distinct contrast features for edge-type and mixed-type dislocations.
ECCI contrast features for edge-type dislocations were spatially smaller than those for mixed-type dislocations in GaN.

Conclusions:

ECCI is a validated, non-destructive, and accessible technique for mapping and identifying dislocations in GaN.
The method allows for differentiation between edge-type and mixed-type threading dislocations.
ECCI holds potential for broader application in characterizing single-crystal materials.