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Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array
James R Riley1, Sonal Padalkar, Qiming Li
1Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
Nano Letters
|August 8, 2013
Summary
Advanced microscopy techniques reveal InGaN/GaN multiquantum wells in nanowire LEDs exhibit high material quality. Analysis shows indium distribution and interfaces comparable to planar LEDs, correlating with emission properties.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) multiquantum wells (QWs) are crucial for light-emitting diodes (LEDs).
- Understanding material quality in nanowire array LEDs is essential for device performance.
Purpose of the Study:
- To analyze the material quality and characteristics of InGaN/GaN multiquantum wells (QWs) in nanowire array LEDs.
- To compare the material quality of nanowire QWs with traditional planar LED QWs.
Main Methods:
- Correlated atom probe tomography for 3D indium distribution and dopant analysis.
- Cross-sectional scanning transmission electron microscopy for interface morphology.
- Cathodoluminescence spectroscopy for optical emission properties.
Main Results:
- Atom probe tomography revealed indium distribution and dopant clustering comparable to planar LED QWs.
- Cross-sectional scanning transmission electron microscopy showed high-quality interfaces in the nanowire QWs.
- Cathodoluminescence spectroscopy demonstrated a correlation between indium composition and emission wavelength in both nonpolar and semipolar QWs.
Conclusions:
- Nanowire array InGaN/GaN QWs demonstrate material quality on par with planar LEDs.
- The advanced characterization techniques provide critical insights into nanowire LED material properties.
- Position-dependent optical properties are directly linked to the local indium composition within the QWs.
