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Updated: May 15, 2025

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Resistive Switching in α-In2Se3 Lateral Field-Effect Transistors.

Ting-Ching Chu1, Hyeonseon Choi2, Christopher E Mead2

  • 1Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208, United States.

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|April 11, 2025
PubMed
Summary
This summary is machine-generated.

Resistive switching in ferroelectric semiconducting field-effect transistors (FeS-FETs) is influenced by both polarization switching and defects. Understanding these mechanisms is key for improving FeS-FETs for memory applications.

Keywords:
ferroelectric semiconductorsfield-effect transistorsindium selenidekelvin probe force microscopyresistive switchingscanning photocurrent microscopyscanning transmission electron microscopy

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional ferroelectric semiconducting field-effect transistors (FeS-FETs) show promise for advanced memory and neuromorphic computing due to nonvolatile resistive switching.
  • The precise mechanisms behind resistive switching in α-In2Se3 lateral devices, especially the roles of channel and contact resistance, are not fully understood.

Purpose of the Study:

  • To spatially resolve gate-poling-dependent contact and channel resistances in α-In2Se3 FeS-FETs.
  • To investigate the influence of spontaneous polarization and defect formation on resistive switching characteristics.
  • To elucidate the mechanisms governing resistive switching for improved FeS-FET performance.

Main Methods:

  • Kelvin probe force microscopy (KPFM) to map contact and channel resistances.
  • Scanning photocurrent microscopy (SPCM) to quantify Schottky barrier height changes.
  • Ex situ high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) to observe structural defects.

Main Results:

  • Both contact and channel resistances increased with positive poling and decreased with negative poling, correlating with Schottky barrier height modulation.
  • Spontaneous polarization was confirmed to affect both channel and contact resistances in multidomain flakes.
  • Clockwise resistive switching was observed even without clear ferroelectric polarization switching, often accompanied by stacking defects induced by gate poling.

Conclusions:

  • Resistive switching in α-In2Se3 lateral devices is a complex phenomenon influenced by both reversible polarization switching and irreversible defect formation.
  • The formation of stacking defects can impede domain wall motion, explaining the lack of abrupt switching thresholds.
  • Improved domain wall control and defect mitigation strategies are crucial for enhancing FeS-FET performance and reliability in memory applications.