Related Experiment Video
Updated: May 29, 2026

Harvesting Solar Energy by Means of Charge-Separating Nanocrystals and Their Solids
Published on: August 23, 2012
Surface charge and piezoelectric fields control auger recombination in semiconductor nanocrystals
Zhong-Jie Jiang1, David F Kelley
1University of California, Merced, Merced, California 95343, United States.
Abstract:
The dynamics of biexcitons in CdSe nanoparticles are examined as a function of the magnitudes of internal electric fields. We show that the presence of strong internal fields results in rapid Auger recombination. The strengths of the electric fields and hence the Auger recombination rates are controlled in several different ways: specifically, by varying the dielectric constant of the surrounding solvent, by changing the particle surface stoichiometry and hence the magnitude of surface charges, and by inducing a piezoelectric field through the deposition of a lattice-mismatched shell material. Auger recombination is a momentum forbidden process. Fourier transformation of calculated spatial wave functions shows that higher conduction band states have large momentum components that relax the momentum conservation constraints. Relative Auger recombination times depend upon the extent to which the internal electric fields mix conduction band levels, which is easily calculated. Comparison with calculations of valence band states suggests that the excited particle in biexciton Auger recombination is the other electron. The experimental results can therefore be understood in terms of mixing of higher conduction band states with the lowest state from which recombination occurs.
Related Concept Videos
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
P-N junction
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

