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Photonic network laser.

Heeso Noh1, Jin-Kyu Yang, Seng Fatt Liew

  • 1Department of Applied Physics, Yale University, New Haven, Connecticut 06511, USA. heeso.noh@yale.edu

Optics Letters
|September 21, 2011
PubMed
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We achieved lasing in disordered 2D trivalent networks, demonstrating a large photonic bandgap. Localized band-edge modes with high quality factors were observed, unlike in traditional photonic crystals.

Area of Science:

  • Photonics
  • Materials Science
  • Condensed Matter Physics

Background:

  • Photonic bandgaps are crucial for controlling light.
  • Traditional photonic crystals rely on long-range order.
  • Disordered systems offer alternative pathways for photonic functionalities.

Purpose of the Study:

  • To demonstrate lasing in two-dimensional (2D) trivalent network structures with short-range order.
  • To investigate the photonic properties, specifically the bandgap, of these disordered networks.
  • To characterize the nature of band-edge modes in such structures.

Main Methods:

  • Fabrication and characterization of 2D trivalent network structures.
  • Optical measurements to demonstrate lasing.
  • Analysis of photonic bandgap formation and mode localization using numerical simulations or experimental data.

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Main Results:

  • Successful demonstration of lasing in the 2D trivalent networks.
  • Observation of a large, isotropic photonic bandgap despite the lack of long-range order.
  • Spatially localized band-edge modes with high quality factors were identified.

Conclusions:

  • Disordered 2D trivalent networks can support lasing and exhibit significant photonic bandgaps.
  • The localized nature of band-edge modes in these structures differs from extended modes in photonic crystals.
  • These findings open new avenues for designing photonic devices using disordered materials.