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Updated: May 28, 2026

Depolymerizable Olefinic Polymers Based on Fused-Ring Cyclooctene Monomers
Published on: December 16, 2022
Ru cyclooctatetraene precursors for MOCVD
Tatsuya Ando1, Naoki Nakata, Kazuharu Suzuki
1Department of Chemistry and Biochemistry, Graduate School of Engineering, Kyushu University, 744 Moto-oka, Nishi-ku, Fukuoka 819-0395, Japan.
New ruthenium (Ru) cyclooctatetraene complexes offer optimal properties for metal organic chemical vapor deposition (MOCVD) applications. These compounds enable the deposition of highly conformal Ru thin films, even in high aspect ratio structures.
Area of Science:
- Materials Science
- Inorganic Chemistry
- Chemical Engineering
Background:
- Metal organic chemical vapor deposition (MOCVD) is crucial for depositing thin films in microelectronics.
- Ruthenium (Ru) thin films are desirable for various electronic applications.
- Developing suitable precursor materials is key to advancing MOCVD processes.
Purpose of the Study:
- To synthesize and characterize novel Ru(0) cyclooctatetraene complexes.
- To evaluate the suitability of these complexes as precursors for MOCVD.
- To investigate the properties of Ru thin films deposited using these new precursors.
Main Methods:
- Synthesis of a series of Ru(0) cyclooctatetraene complexes.
- Thermal analysis to determine melting and decomposition temperatures.
- MOCVD experiments to deposit Ru thin films on SiO(2).
- Surface characterization using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and X-ray Photoelectron Spectroscopy (XPS).
Main Results:
- The synthesized complexes exhibit exceptionally low melting and decomposition temperatures.
- Highly conformal Ru thin films were achieved on SiO(2) substrates, including features with high aspect ratios (40:1).
- SEM, AFM, and XPS analyses confirmed the near-ideal conformal nature and quality of the deposited films.
Conclusions:
- The presented Ru(0) cyclooctatetraene complexes are promising precursors for MOCVD.
- These precursors facilitate the deposition of high-quality, conformal Ru films essential for advanced microelectronic fabrication.
- The low processing temperatures and excellent conformality represent significant advancements in Ru MOCVD technology.
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