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High quantum efficiency GaP avalanche photodiodes.

Dion McIntosh¹, Qiugui Zhou, Yaojia Chen

¹Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, Virginia 22904, USA.

|October 15, 2011

Summary

This summary is machine-generated.

Researchers developed Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs) with ultra-low dark current. These GaP APDs achieved a record 70% quantum efficiency, significantly improving upon previous designs for enhanced performance.

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Area of Science:

Materials Science
Optoelectronics
Semiconductor Physics

Background:

Avalanche photodiodes (APDs) are critical photodetectors in various applications.
Gallium Phosphide (GaP) offers unique material properties for optoelectronic devices.
Previous GaP APDs faced limitations in performance metrics like quantum efficiency and dark current.

Purpose of the Study:

To report the development of Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs).
To achieve ultra-low dark current and high quantum efficiency in GaP APDs.
To demonstrate the effectiveness of a recessed window structure for performance enhancement.

Main Methods:

Fabrication of Gallium Phosphide (GaP) based reach-through APDs.
Implementation of a recessed window structure in the APD design.
Characterization of APD performance, including dark current and quantum efficiency measurements.

Main Results:

The developed GaP APDs exhibited a dark current below 1 pico-ampere at unity gain.
A quantum efficiency of 70% was successfully achieved.
This quantum efficiency represents a significant improvement, nearly doubling previous results.

Conclusions:

The study successfully demonstrates high-performance Gallium Phosphide (GaP) reach-through avalanche photodiodes (APDs).
The achieved low dark current and high quantum efficiency highlight the potential of GaP for advanced photodetector applications.
The recessed window structure is a key innovation for enhancing APD performance.