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Related Concept Videos

The Hall Effect01:30

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
The de Broglie Wavelength02:32

The de Broglie Wavelength

In the macroscopic world, objects that are large enough to be seen by the naked eye follow the rules of classical physics. A billiard ball moving on a table will behave like a particle; it will continue traveling in a straight line unless it collides with another ball, or it is acted on by some other force, such as friction. The ball has a well-defined position and velocity or well-defined momentum, p = mv, which is defined by mass m and velocity v at any given moment. This is the typical...
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...
The Pauli Exclusion Principle03:06

The Pauli Exclusion Principle

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Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
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The work...
π Electron Effects on Chemical Shift: Overview01:27

π Electron Effects on Chemical Shift: Overview

An applied magnetic field causes loosely bound π-electrons in organic molecules to circulate, producing a local or induced diamagnetic field over a large spatial volume. As the molecules tumble in solution, the field generated by π-electrons in spherical substituents results in a zero net field. However, the net field generated by π-electrons in non-spherical substituents is not zero. The effect of this induced field depends on the orientation of the molecule with respect to B0, resulting in...

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Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
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Published on: January 21, 2016

Integer quantum Hall effect in trilayer graphene.

A Kumar1, W Escoffier, J M Poumirol

  • 1LNCMI, CNRS-UPR 3228, INSA, UJF, UPS, 143 Avenue de Rangueil, 31400 Toulouse, France.

Physical Review Letters
|October 27, 2011
PubMed
Summary
This summary is machine-generated.

High magnetic fields reveal the integer quantum Hall effect in trilayer graphene, showing unique behavior compared to graphene monolayers. Theoretical calculations confirm these findings, considering Landau levels and layer stacking.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Quantum Hall effect is a key phenomenon in 2D electron systems.
  • Graphene and its multilayers offer unique electronic properties.

Purpose of the Study:

  • Investigate the integer quantum Hall effect in trilayer graphene.
  • Compare trilayer graphene's behavior to graphene monolayers.
  • Understand the role of disorder and carrier types.

Main Methods:

  • Experiments using high magnetic fields (up to 60 T).
  • Magnetotransport measurements.
  • Theoretical modeling using self-consistent Hartree calculations.

Main Results:

  • Observed compelling evidence of the integer quantum Hall effect in trilayer graphene.
  • Noted the absence of a plateau at filling factor ν=2, unlike graphene monolayers.
  • Observed vanishing Hall resistance at low filling factors due to mixed carriers.
  • Theoretical calculations accurately reproduced experimental results.

Conclusions:

  • Trilayer graphene exhibits distinct quantum Hall effects compared to monolayers.
  • Disorder-induced mixed carriers significantly influence low-filling factor behavior.
  • ABC stacking and Landau level calculations are crucial for theoretical understanding.