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Enhanced photo-sensitivity through an increased light-trapping on Si by surface nano-structuring using MWCNT etch
Min-Young Hwang1, Hyungsuk Kim, Eun-Soo Kim
1College of Electronics and Information, Kwangwoon University, Nowon-gu Seoul 139-701, South Korea. jihoonlee@kw.ac.kr.
Nanoscale Research Letters
|November 2, 2011
Summary
Surface nano-structuring using multi-walled carbon nanotube (MWCNT) etch masks significantly enhances photo-sensitivity (PS) by improving light-trapping in silicon. This technique offers potential for advanced optoelectronic devices.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Photo-sensitivity (PS) is crucial for optoelectronic devices.
- Enhancing light-trapping is key to improving PS.
- Surface nano-structuring offers a route to improved light-trapping.
Purpose of the Study:
- To demonstrate enhanced photo-sensitivity through surface nano-structuring.
- To investigate the effect of multi-walled carbon nanotube (MWCNT) etch masks on silicon.
- To analyze light-trapping efficiency and its impact on PS.
Main Methods:
- Utilized inductively coupled plasma (ICP) etching with MWCNT as an etch mask.
- Prepared four silicon samples using conventional photolithography and ICP etching.
- Fabricated device structures with bare silicon and MWCNT-etched silicon active regions.
Main Results:
- The MWCNT-etched silicon with hexamethyl-disilazane (HMDS) dispersion exhibited the highest RMS roughness and lowest reflectance.
- Increased light-trapping was most significant in the mid-ultraviolet (UV) spectrum.
- A sharp increase in photo-sensitivity was observed with ICP-etched silicon using CNT HMDS dispersion.
Conclusions:
- Surface nano-structuring with MWCNT etch masks effectively enhances light-trapping in silicon.
- The developed technique leads to a significant improvement in photo-sensitivity.
- This method holds promise for applications in optoelectronics requiring enhanced light-trapping.
