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Updated: May 27, 2026

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

Impact of drift gap, N-layer, and deep N+ sinker on breakdown voltage and saturation current of lateral

Kunsik Sung1, Taeyoung Won

  • 1Department of Electrical Engineering, School of Engineering, Inha University, Incheon 402-751, Korea.

Journal of Nanoscience and Nanotechnology
|November 23, 2011
PubMed

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