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Direct measurement of the growth mode of graphene on SiC(0001) and SiC(0001¯)
J B Hannon1, M Copel, R M Tromp
1IBM Research Division, TJ Watson Research Center, Yorktown Heights, New York 10598, USA.
Abstract:
We have determined the growth mode of graphene on SiC(0001) and SiC(0001¯) using ultrathin, isotopically labeled Si(13)C "marker layers" grown epitaxially on the Si(12)C surfaces. Few-layer graphene overlayers were formed via thermal decomposition at elevated temperature. For both surface terminations (Si face and C face), we find that the (13)C is located mainly in the outermost graphene layers, indicating that, during decomposition, new graphene layers form underneath existing ones.
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