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Published on: May 13, 2020
Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells
Xianwen Sun1, Guoqiang Li, Li Chen
1Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics and Electronics, Henan University, Kaifeng, 475004, People's Republic of China. wfzhang@henu.edu.cn.
Abstract:
Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.
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