Quantum mechanical simulation of hole transport in p-type Si Schottky barrier MOSFETs

A full quantum-mechanical simulation of p-type nanowire Schottky barrier metal oxide silicon field effect transistors (SB-MOSFETs) is performed by solving the three-dimensional Schrödinger and Poisson's equations self-consistently. The non-equilibrium Green's function (NEGF) approach is adopted to treat hole transport, especially quantum tunneling through SB. In this work, p-type nanowire SB-MOSFETs are simulated based on the 3-band k.p method, using the k.p parameters that were tuned by benchmarking against the tight-binding method with sp3s* orbitals. The device shows a strong dependence on the transport direction, due to the orientation-sensitive tunneling effective mass and the confinement energy. With regard to the subthreshold slope, the [110] and [111] oriented devices with long channel show better performance, but they are more vulnerable to the short channel effects than the [100] oriented device. The threshold voltage also shows a greater variation in the [110] and [111] oriented devices with the decrease of the channel length.