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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Nanoscale two-bit/cell NAND silicon-oxide-nitride-oxide-silicon memory device with different tunneling oxide

Hyun Joo Kim1, Joo Hyung You, Sung Ho Kim

  • 1Department of Information Display Engineering, Hanyang University, Seoul 133-791, Korea.

Journal of Nanoscience and Nanotechnology
|November 30, 2011
PubMed

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