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Related Concept Videos

The Hall Effect01:30

The Hall Effect

Edwin H. Hall, in the year 1879, devised an experiment that could be used to identify the polarity of the predominant charge carriers in a conducting material. From a historical perspective, this experiment was the first to demonstrate that the charge carriers in most metals are negative.
MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Equivalent Capacitance01:19

Equivalent Capacitance

Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
Equivalent Capacitance01:19

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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An improved equivalent simulation model for CMOS integrated Hall plates.

Yue Xu1, Hong-Bin Pan

  • 1School of Electronic Science & Engineering, Nanjing University, Nanjing, China. yuex@njupt.edu.cn

Sensors (Basel, Switzerland)
|December 14, 2011
PubMed
Summary
This summary is machine-generated.

This paper introduces a new CMOS-integrated Hall plate simulation model. It accurately captures complex effects using fewer parameters and a simple structure, validated by experimental data.

Keywords:
Verilog-Ahall platenon-linear effectssimulation model

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Area of Science:

  • Electrical Engineering
  • Semiconductor Device Physics
  • Microelectronics

Background:

  • Existing Hall plate models lack accuracy in representing non-linear and environmental effects.
  • Accurate simulation models are crucial for designing reliable Hall effect sensors in integrated circuits.

Purpose of the Study:

  • To develop an improved equivalent simulation model for CMOS-integrated Hall plates.
  • To incorporate voltage-dependent non-linear effects, geometrical influences, temperature variations, and packaging stress.
  • To create a model with a simple structure and minimal physical/technological parameters.

Main Methods:

  • Developed a novel equivalent circuit model comprising passive networks, non-linear resistances, controlled voltage sources, and parasitic capacitances.
  • Implemented the model using Verilog-A hardware description language.
  • Validated the model's performance using the Cadence Spectre simulator.

Main Results:

  • The new model successfully simulates CMOS-integrated Hall plates.
  • It accurately accounts for voltage-dependent non-linearities, geometry, temperature, and stress.
  • Simulation outcomes closely match established experimental results from literature.

Conclusions:

  • The proposed Hall plate model offers enhanced accuracy and simplicity for CMOS integrated circuits.
  • It provides a valuable tool for the design and analysis of Hall effect sensors.
  • The model's ability to include various physical influences makes it versatile for different applications.