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Updated: May 26, 2026
Radio Frequency Magnetron Sputtering of GdBa2Cu3O7−δ/ La0.67Sr0.33MnO3 Quasi-bilayer Films on SrTiO3 (STO) Single-crystal Substrates
Published on: April 12, 2019
Defect structure and Fermi-level pinning of BaTiO3 co-doped with a variable-valence acceptor (Mn) and a fixed-valence
Yun-Young Yeoh1, Hyejin Jang, Han-Ill Yoo
1WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
Abstract:
Defect structures of BaTiO(3) and the like co-doped with variable-valence acceptors and donors are not clear particularly in transition from acceptor domination to donor domination with increasing oxygen activity. We have, thus, examined the electrical conductivity and thermoelectric power of BaTiO(3) co-doped with a variable-valence acceptor Mn(Mn(Ti)'', Mn(Ti)') and a fixed-valence donor Y(Y(ba)·) in different co-doping ratios (m(d)/m(a)) as functions of oxygen activity in the range of -20 < log a(O(2))≤ 0 at elevated temperatures of 900-1100 °C. Their systematic variations with m(d)/m(a) and log a(O(2)) are reported, and thereby defect structures of the co-doped BaTiO(3) depending on m(d)/m(a) are determined. It is found that for the co-doping ratio 1 < m(d)/m(a) < 2, the Fermi level is pinned at a few kT's around the deep level of Mn(Ti)'' across the otherwise p-type semiconducting log a(O(2))-region of Mn-singly doped BaTiO(3), and attributed to deep acceptor-shallow donor mutual compensation 2[Mn(Ti)''] + [Mn(Ti)'] ≈ [Y(ba)·], thus turning otherwise p-type semiconducting BaTiO(3) semi-insulating.
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