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Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory.

Gwangsik Jeon1, Sangmin Jeon1, Seunghwan Lee2

  • 1Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|November 30, 2025
PubMed
Summary

A new sacrificial atomic layer deposition (s-ALD) method enables the creation of highly uniform, ultrathin antimony (Sb) films. This breakthrough is crucial for advancing nanoscale electronics and phase change memory devices.

Keywords:
antimonyatomic layer depositionlocal epitaxial growthnanoscale electronicsphase change memory

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Physics

Background:

  • Antimony (Sb) exhibits unique thickness-dependent properties essential for advanced electronics.
  • Conventional thin-film deposition methods struggle with conformality and uniformity for ultrathin Sb films on complex nanostructures.

Purpose of the Study:

  • To develop a novel method for depositing continuous, conformal, and uniform ultrathin antimony films.
  • To overcome the limitations of existing deposition techniques for nanoscale antimony applications.

Main Methods:

  • A sacrificial atomic layer deposition (s-ALD) approach utilizing chemical substitution between an antimony precursor and pre-deposited Sb2Te3.
  • Leveraging the structural similarity between Sb2Te3 and Sb for epitaxial growth.
  • Characterization of film properties including uniformity, conformality, and surface smoothness.

Main Results:

  • Achieved highly pure Sb films with exceptional surface smoothness (RMS roughness << 1 nm) and (00l)-orientation at 4 nm thickness.
  • Demonstrated wafer-scale uniformity and conformality on high-aspect-ratio structures.
  • Phase change memory devices with 5 nm s-ALD Sb films showed ultrafast switching (≈220 fs), high uniformity (CV < 5%), and low drift coefficients.

Conclusions:

  • The s-ALD technique provides a viable method for depositing high-quality ultrathin Sb films.
  • This advancement enables the full exploitation of antimony's nanoscale properties in electronic devices.
  • The developed method is promising for future nanoscale fabrication and device optimization.