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Updated: May 26, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Effects of process parameters on sheet resistance uniformity of fluorine-doped tin oxide thin films
Chairul Hudaya1, Ji Hun Park, Joong Kee Lee
1Advanced Energy Materials Processing Laboratory, Energy Storage Research Center, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seongbuk-gu, Seoul, 136-791, Republic of Korea. leejk@kist.re.kr.
Abstract:
An alternative indium-free material for transparent conducting oxides of fluorine-doped tin oxide [FTO] thin films deposited on polyethylene terephthalate [PET] was prepared by electron cyclotron resonance - metal organic chemical vapor deposition [ECR-MOCVD]. One of the essential issues regarding metal oxide film deposition is the sheet resistance uniformity of the film. Variations in process parameters, in this case, working and bubbler pressures of ECR-MOCVD, can lead to a change in resistance uniformity. Both the optical transmittance and electrical resistance uniformity of FTO film-coated PET were investigated. The result shows that sheet resistance uniformity and the transmittance of the film are affected significantly by the changes in bubbler pressure but are less influenced by the working pressure of the ECR-MOCVD system.

