Field-effect transistors fabricated from diluted magnetic semiconductor colloidal nanowires
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Published on: December 7, 2017
1ARC Centre of Excellence for Functional Nanomaterials, Australian Institute for Bioengineering and Nanotechnology (AIBN), The University of Queensland (UQ), QLD 4072, Australia. z.li3@uq.edu.au
Abstract:
Field-effect transistors (FETs) fabricated from undoped and Co(2+)-doped CdSe colloidal nanowires show typical n-channel transistor behaviour with gate effect. Exposed to microscope light, a 10 times current enhancement is observed in the doped nanowire-based devices due to the significant modification of the electronic structure of CdSe nanowires induced by Co(2+)-doping, which is revealed by theoretical calculations from spin-polarized plane-wave density functional theory.

