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Related Experiment Video

Updated: May 25, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
11:25

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications

Published on: April 21, 2016

Photoactive memory by a Si-nanowire field-effect transistor.

Chung-Jin Kim1, Sung-Jin Choi, Jae-Hyuk Ahn

  • 1Department of Electrical Engineering, KAIST, 291 Daehak-ro, Republic of Korea.

ACS Nano
|January 18, 2012
PubMed
Summary

A novel photoactive memory device using silicon nanowire field-effect transistors (Si-NW FETs) and [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) shows improved performance. This development enhances optoelectronic applications with greater design flexibility.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics

Background:

  • Silicon nanowire (Si-NW) field-effect transistors (FETs) are crucial for advanced electronics.
  • Integrating organic materials with inorganic semiconductors presents challenges and opportunities.

Purpose of the Study:

  • To implement a photoactive memory device using a double-gate Si-NW FET.
  • To graft solution-processable [6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) into nanogaps for enhanced functionality.

Main Methods:

  • Fabrication of a double-gate Si-NW FET.
  • Grafting of PCBM into the nanogaps of the Si-NW FET.
  • Characterization of FET properties and memory performance under optical stimulation.

Main Results:

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Flow-assisted Dielectrophoresis: A Low Cost Method for the Fabrication of High Performance Solution-processable Nanowire Devices
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  • Superior field-effect transistor characteristics were observed despite organic material integration.
  • Lowered operation voltage was achieved using an optical source and efficient photon absorption.
  • Memory performance was significantly improved by individually controlling asymmetric gate voltages.

Conclusions:

  • The developed photoactive Si-NW FET demonstrates promising characteristics for memory applications.
  • The CMOS-compatible process enables flexible optoelectronic device design.
  • This work paves the way for advanced optoelectronic applications.