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Laser-induced Forward Transfer for Flip-chip Packaging of Single Dies
Published on: March 20, 2015
High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode
1Department of Electrical and Computer Engineering, University of Virginia, 351 McCormick Road, Charlottesville, VA 22904, USA. zl4s@virginia.edu
Optics Express
|January 26, 2012
Abstract:
We demonstrate a flip-chip bonded modified uni-traveling carrier (MUTC) photodiode with an RF output power of 0.75 W (28.8 dBm) at 15 GHz and OIP3 as high as 59 dBm. The photodiode has a responsivity of 0.7 A/W, 3-dB bandwidth > 15 GHz, and saturation photocurrent > 180 mA at 11 V reverse bias.
