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Related Concept Videos

Atomic Spectroscopy: Effects of Temperature01:27

Atomic Spectroscopy: Effects of Temperature

Atomization, converting samples into gas-phase atoms and ions, is essential for atomic spectroscopy. The flame temperature required for atomization affects the efficiency of the atomic spectroscopic methods by increasing the atomization efficiency and the relative population of the excited and ground states.
At thermal equilibrium, the relative populations of excited and ground state atoms can be estimated using the Maxwell–Boltzmann distribution. For example, an increase in temperature from...
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Room temperature ballistic transport in InSb quantum well nanodevices.

A M Gilbertson, A Kormányos, P D Buckle

    Applied Physics Letters
    |January 26, 2012
    PubMed
    Summary

    Room temperature ballistic electron transport was observed in indium antimonide/aluminum indium antimonide (InSb/AlInSb) quantum wells. This breakthrough utilizes a partitioned growth-buffer scheme for practical mesoscopic devices.

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    Area of Science:

    • Condensed Matter Physics
    • Materials Science
    • Nanotechnology

    Background:

    • Ballistic electron transport is crucial for next-generation electronics.
    • Achieving ballistic transport at room temperature in mesoscopic devices remains a challenge.
    • Indium antimonide (InSb) based heterostructures offer potential for high-performance electronic devices.

    Purpose of the Study:

    • To demonstrate room temperature ballistic electron transport in InSb/AlInSb quantum wells.
    • To investigate the feasibility of exploiting ballistic effects in practical mesoscopic devices.
    • To establish effective growth and processing strategies for such devices.

    Main Methods:

    • Fabrication of shallow etched four-terminal mesoscopic devices on InSb/AlInSb quantum well heterostructures.
    • Implementation of a partitioned growth-buffer scheme during material growth.
    • Observation and analysis of electron transport characteristics at room temperature (295 K).

    Main Results:

    • Significant ballistic electron transport was observed at 295 K.
    • A clear negative bend resistance signature, indicative of ballistic transport, was detected.
    • The effect was observed at current densities exceeding 10^6 A/cm^2.
    • Ballistic transport was confirmed in devices with practical dimensions.

    Conclusions:

    • Room temperature ballistic electron transport is achievable in InSb/AlInSb quantum wells.
    • The partitioned growth-buffer scheme is critical for enabling these effects.
    • Effective growth and processing strategies allow exploitation of room temperature ballistic effects in mesoscopic devices.