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Updated: May 25, 2026

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
Published on: November 16, 2018
Control of efficiency, brightness, and recombination zone in light-emitting field effect transistors
Ben B Y Hsu1, Chunhui Duan, Ebinazar B Namdas
1Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, USA.
Abstract:
The split-gate light emitting field effect transistors (SG-LEFETs) demonstrate a new strategy for ambipolar LEFETs to achieve high brightness and efficiency simultaneously. The SG architecture forces largest quantity of opposite charges on Gate 1 and Gate 2 area to meet in the center of the channel. By actively and independently controlling current injection from separated gate electrodes within transporting channel, high brightness can be obtained in the largest injection current regime with highest efficiency.
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