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Fabrication of Wireless Micro Pressure Sensor Using the CMOS Process.

Ching-Liang Dai¹, Po-Wei Lu, Chyan-Chyi Wu

¹Department of Mechanical Engineering, National Chung Hsing University, Taichung, 402 Taiwan;

Sensors (Basel, Switzerland)

|February 1, 2012

Summary

This study presents a wireless micro pressure sensor using a field-effect transistor (FET) fabricated with CMOS technology. The sensor achieves a sensitivity of 0.08 mV/kPa and a wireless transmission range of 10 cm.

Keywords:

CMOS-MEMS oscillators wireless micro pressure sensor

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Area of Science:

Micro/Nanoelectromechanical Systems (MEMS/NEMS)
Semiconductor Device Physics
Wireless Sensor Technology

Background:

Traditional pressure sensors often require wired connections, limiting their application in certain environments.
Miniaturization and wireless capabilities are key trends in modern sensor development.
Complementary Metal Oxide Semiconductor (CMOS) technology offers a scalable platform for integrated sensor fabrication.

Purpose of the Study:

To fabricate a novel wireless micro pressure sensor.
To leverage commercial CMOS processes with post-processing for sensor integration.
To achieve a compact and sensitive pressure sensing solution with wireless data transmission.

Main Methods:

Fabrication of a wireless micro pressure sensor using a commercial CMOS process and a post-process.
Integration of a Field Effect Transistor (FET) pressure sensor, oscillator, amplifier, and antenna.
Utilizing 16 parallel sensing cells, each with a Metal Oxide Semiconductor (MOS) and a suspended membrane acting as the gate.
Employing etchants for sacrificial layer removal and Low Pressure Chemical Vapor Deposition (LPCVD) parylene for sealing.

Main Results:

The fabricated wireless micro pressure sensor demonstrated a sensitivity of 0.08 mV/kPa.
The sensor operated effectively within a pressure range of 0-500 kPa.
Successful wireless data transmission was achieved over a distance of 10 cm.

Conclusions:

A functional wireless micro pressure sensor was successfully fabricated using CMOS technology and post-processing.
The sensor design integrates sensing, signal conditioning, and wireless transmission capabilities.
The results indicate the potential of this technology for various pressure monitoring applications requiring wireless data.