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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...

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Related Experiment Video

Updated: May 25, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

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An Integrated ISFET Sensor Array.

Kazuo Nakazato¹

¹Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan; E-Mail: nakazato@nuee.nagoya-u.ac.jp ; Tel.: +81-52-789-3307;

Sensors (Basel, Switzerland)

|February 1, 2012

Summary

This study introduces a novel integrated sensor array and interface circuit for advanced applications. The developed system enables high-density, low-power sensing for pH, DNA, and bio-imaging.

Keywords:

CMOS biotechnology ISFET biosensor array source-drain follower

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Area of Science:

Materials Science
Electrical Engineering
Biotechnology

Background:

Integrated sensor arrays are crucial for miniaturized analytical devices.
Existing technologies face limitations in power consumption and density.
Novel interface circuits are needed for efficient sensor signal processing.

Purpose of the Study:

To develop a monolithically integrated Ion-Selective Field-Effect Transistor (ISFET) sensor array and interface circuit.
To create a high-density, low-power source-drain follower for the sensor array.
To demonstrate the array's utility in diverse sensing applications.

Main Methods:

Fabrication of ISFETs using Au/Ti extended-gate electrodes on MOSFETs.
Deposition of silicon nitride and SU-8 protective layers.
Development of a new high-density, low-power source-drain follower circuit.

Main Results:

Successful monolithic integration of ISFET sensor array and interface circuit.
Demonstration of a novel low-power, high-density source-drain follower.
Validation of the array for pH, DNA, and bio-image sensing applications.

Conclusions:

The integrated ISFET sensor array and interface circuit offer a versatile platform for multiple sensing modalities.
The developed technology enables high-density, low-power sensing solutions.
Potential applications span environmental monitoring, diagnostics, and bio-imaging.