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Updated: May 25, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor-acceptor
Matthias Treier1, Andrea Liscio, Jeffrey M Mativetsky
1ISIS/UMR CNRS 7006, Université de Strasbourg, 8 allée Gaspard Monge, 67000, Strasbourg, France.
Abstract:
We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC-PMI donor-acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned 'on' much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).

