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Carbon nanotube bumps for the flip chip packaging system
Chin Chong Yap1, Christophe Brun, Dunlin Tan
1CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore. HTTEO@ntu.edu.sg.
Nanoscale Research Letters
|February 9, 2012
Summary
This study demonstrates a novel carbon nanotube (CNT) interconnection bump joining method for microelectronics. The technique enables reliable electrical connections with potential for reworkability in advanced semiconductor packaging.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Traditional interconnection methods face challenges with miniaturization and reliability.
- Carbon nanotubes offer unique electrical and mechanical properties for advanced interconnects.
Purpose of the Study:
- To demonstrate a novel carbon nanotube (CNT) interconnection bump joining methodology.
- To investigate the mechanical strength and reworkability of CNT interconnection bumps.
- To evaluate the preliminary electrical characteristics of CNT-based interconnections.
Main Methods:
- Utilizing plasma-enhanced chemical vapor deposition (PECVD) to grow CNT bumps on gold metallization.
- Employing a flip-chip approach with test structures featuring sub-150 μm bump pitches.
- Inserting CNT bumps from a die substrate into those on a carrier substrate for interconnection.
Main Results:
- Successful demonstration of CNT interconnection bump joining for flip chip test structures.
- Investigation into the mechanical strength and reworkability of the developed CNT interconnections.
- Preliminary electrical testing indicated linear current-voltage relationships, suggesting ohmic contacts.
Conclusions:
- The demonstrated CNT interconnection bump joining methodology is viable for microelectronic applications.
- CNT interconnections show promise for mechanical robustness and reworkability.
- The findings support the potential of CNTs as a material for future semiconductor interconnects.
