Identification of structural defects in graphitic materials by gas-phase anisotropic etching

Shuang Wu1, Rong Yang, Dongxia Shi

  • 1Nanoscale Physics and Devices Lab, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Nanoscale
|February 10, 2012
PubMed
Summary

We developed an anisotropic etching technique to precisely identify structural defects in graphitic materials like graphene. This method reveals defect density, domain size, and lattice orientation for quality assessment.

Related Concept Videos