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Photo-EMF sensitivity of porous silicon thin layer-crystalline silicon heterojunction to ammonia adsorption
Yuriy Vashpanov1, Jae Il Jung, Kae Dal Kwack
1Electrical and Computer Engineering Division, Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Sung-dong-gu, 133-791 Seoul, Korea. vashpanov@hanyang.ac.kr
Abstract:
A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light.
