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Updated: May 24, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
SiOx/SiNy multilayers for photovoltaic and photonic applications
Ramesh Pratibha Nalini1, Larysa Khomenkova, Olivier Debieu
1CIMAP UMR CNRS/CEA/ENSICAEN/UCBN, 6 Bd, Maréchal Juin, 14050 Caen Cedex 4, France. pratibha-nalini.sundar@ensicaen.fr.
Abstract:
Microstructural, electrical, and optical properties of undoped and Nd3+-doped SiOx/SiNy multilayers fabricated by reactive radio frequency magnetron co-sputtering have been investigated with regard to thermal treatment. This letter demonstrates the advantages of using SiNy as the alternating sublayer instead of SiO2. A high density of silicon nanoclusters of the order 1019 nc/cm3 is achieved in the SiOx sublayers. Enhanced conductivity, emission, and absorption are attained at low thermal budget, which are promising for photovoltaic applications. Furthermore, the enhancement of Nd3+ emission in these multilayers in comparison with the SiOx/SiO2 counterparts offers promising future photonic applications.PACS: 88.40.fh (Advanced materials development), 81.15.cd (Deposition by sputtering), 78.67.bf (Nanocrystals, nanoparticles, and nanoclusters).

