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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology
Published on: December 7, 2015
Crosstalk analysis of carbon nanotube bundle interconnects
Kailiang Zhang1, Bo Tian, Xiaosong Zhu
1School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic and Communication Devices, Tianjin University of Technology, Tianjin, 300384, China. kailiang_zhang@yahoo.com.cn.
Abstract:
Carbon nanotube (CNT) has been considered as an ideal interconnect material for replacing copper for future nanoscale IC technology due to its outstanding current carrying capability, thermal conductivity, and mechanical robustness. In this paper, crosstalk problems for single-walled carbon nanotube (SWCNT) bundle interconnects are investigated; the interconnect parameters for SWCNT bundle are calculated first, and then the equivalent circuit has been developed to perform the crosstalk analysis. Based on the simulation results using SPICE simulator, the voltage of the crosstalk-induced glitch can be reduced by decreasing the line length, increasing the spacing between adjacent lines, or increasing the diameter of SWCNT.
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