Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Types of Semiconductors01:20

Types of Semiconductors

Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
Semiconductors01:22

Semiconductors

There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Amplified chiroptic response in a multi-helical penta-perylene structure.

Chemical science·2026
Same author

Designing effective single-molecule electromagnets with radially π-conjugated carbon structures.

Nature communications·2026
Same author

Scanning Tunneling Microscope-Based Break-Junction TechniqueA Tutorial.

ACS physical chemistry Au·2026
Same author

A Computationally Efficient and Accurate Method for Predicting Conductance of Single-Molecule Junctions.

Nano letters·2026
Same author

Strong Coupling in Orthogonal Nanographenes.

Chemistry (Weinheim an der Bergstrasse, Germany)·2026
Same author

Ion-Conductive Wires Form High-Performance All-Solid-State Polymer Electrolytes.

Journal of the American Chemical Society·2026
Same journal

A Ni-Mediated Cross-Coupling Approach to Deuterated <sup>18</sup>F- Fluoromethylated (Hetero)arenes.

Journal of the American Chemical Society·2026
Same journal

Efficient Light-Driven CO<sub>2</sub> Capture and Reversible Release Enabled by Metastable Photoacid-Decorated Metal-Organic Frameworks.

Journal of the American Chemical Society·2026
Same journal

In Situ Raman Spectroscopy Reveals the Dynamic Evolution and Ethanol Dependence of SEI Structure in Li-Mediated N<sub>2</sub> Reduction Reaction.

Journal of the American Chemical Society·2026
Same journal

Solvent Esterification and Stoichiometric Control in Ambient-Grown FAPbI<sub>3</sub> Single-Crystal Solar Cells.

Journal of the American Chemical Society·2026
Same journal

Unlocking Azulene Functionalization via Strain-Induced Azulyne Intermediates.

Journal of the American Chemical Society·2026
Same journal

An Oxazine-Locked Covalent Organic Framework by a Tandem Pinner/Schiff Base Reaction for Hydrogen Peroxide Photosynthesis.

Journal of the American Chemical Society·2026
See all related articles

Related Experiment Video

Updated: May 24, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Conductive molecular silicon.

Rebekka S Klausen1, Jonathan R Widawsky, Michael L Steigerwald

  • 1Department of Chemistry, Columbia University, New York, New York 10027, United States.

Journal of the American Chemical Society
|February 23, 2012
PubMed
Summary
This summary is machine-generated.

Researchers synthesized oligosilanes to study silicon's electronic properties. They found that silicon's sigma bonds conduct electricity similarly to carbon's pi bonds, impacting semiconductor conductivity.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Related Experiment Videos

Last Updated: May 24, 2026

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators
09:46

Fabrication and Characterization of High-Q Silicon Nitride Membrane Resonators

Published on: August 8, 2025

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Organic Chemistry

Background:

  • Bulk silicon, fundamental to information technology, has a simple electronic structure based on Si-Si sigma bonds.
  • Diamond shares silicon's lattice structure but exhibits vastly different electronic properties, highlighting the importance of bonding.
  • Understanding silicon's conductivity at the molecular level is crucial for advancing semiconductor technology.

Purpose of the Study:

  • To synthesize and electrically characterize oligosilanes, molecules featuring interacting Si-Si sigma bonds.
  • To compare the single-molecule conductance of oligosilanes with that of alkanes.
  • To investigate the role of sigma conjugation in the electrical conductivity of silicon-based materials.

Main Methods:

  • Utilized scanning tunneling microscope-based break-junction technique for single-molecule electrical measurements.
  • Synthesized a class of oligosilane molecules with varying chain lengths.
  • Measured and analyzed the conductance decay with increasing molecular length.

Main Results:

  • Oligosilanes exhibit exponential decay in molecular conductance with increasing chain length.
  • The observed decay constant (β = 0.27 ± 0.01 Å(-1)) is comparable to that of conjugated carbon-carbon pi bonds.
  • This indicates significant charge transport through sigma bonds in silicon.

Conclusions:

  • Sigma conjugation in silicon is a critical factor influencing its electrical conductivity.
  • Oligosilanes serve as a model system to understand charge transport in silicon.
  • The findings have implications for the design of novel silicon-based electronic materials and devices.