A graphite-like zero gap semiconductor with an interlayer separation of 2.8 Å.

Moni Baskey1, Shyamal K Saha

  • 1Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata, India.

Summary

Researchers created a new graphite-like material by re-stacking graphene oxide sheets. This novel crystal phase exhibits properties of an indirect zero gap semiconductor.

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