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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Molecular phosphorus ion source for semiconductor technology
V I Gushenets1, A S Bugaev, E M Oks
1Institute of High Current Electronics SB RAS, Tomsk 634055, Russia. gvi@opee.hcei.tsc.ru
Abstract:
This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.
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