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Published on: December 5, 2015
Rhenium ion beam for implantation into semiconductors
T V Kulevoy1, N N Gerasimenko, D N Seleznev
1Institute for Theoretical and Experimental Physics, Moscow, Russia. kulevoy@itep.ru
The Review of Scientific Instruments
|March 3, 2012
Summary
Researchers developed a Metal Vapor Vacuum Arc ion source to create rhenium silicide nanostructures. These quantum dot-like clusters show promise for advanced nanoelectronics and nanophotonics applications.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- The semiconductor industry requires advanced nanostructures for nanoelectronics and nanophotonics.
- Existing technologies for producing quantum-sized structures with specific parameters are underdeveloped.
Purpose of the Study:
- To develop and investigate a Metal Vapor Vacuum Arc (MVVA) ion source for generating germanium and rhenium ion beams.
- To explore the fabrication of rhenium silicide nanostructures, including homogenous layers and quantum dot-like clusters.
Main Methods:
- Development and testing of an MVVA ion source.
- Ion beam implantation of germanium and rhenium.
- Materials synthesis and characterization of rhenium silicides.
Main Results:
- Successful generation of germanium and rhenium ion beams.
- Fabrication of homogenous layers of rhenium silicides.
- Creation of rhenium silicide clusters exhibiting quantum dot properties under specific ion beam implantation conditions.
Conclusions:
- The developed MVVA ion source is capable of producing rhenium silicide nanostructures.
- These nanostructures, particularly quantum dot-like clusters, hold significant potential for applications in nanoelectronics and nanophotonics.
- Further development of this technology could address the current limitations in producing tailored nanostructures.
