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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Characteristics of MOSFET01:17

Characteristics of MOSFET

Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable quicker...

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Updated: May 24, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
07:51

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection

Published on: February 1, 2022

Graphene-graphite oxide field-effect transistors.

Brian Standley1, Anthony Mendez, Emma Schmidgall

  • 1Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA.

Nano Letters
|March 3, 2012
PubMed
Summary
This summary is machine-generated.

Researchers explored graphite oxide as a gate insulator for graphene field-effect transistors. This ultrathin material shows minimal leakage and comparable breakdown fields to silicon dioxide, offering a promising alternative for advanced electronics.

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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's unique properties make it ideal for field-effect transistors (FETs).
  • Traditional FETs utilize bulk dielectric materials like silicon dioxide (SiO2) or hafnium oxide (HfO2).
  • There is a need for advanced dielectric materials compatible with 2D materials like graphene.

Purpose of the Study:

  • To investigate graphite oxide as an ultrathin gate dielectric for graphene FETs.
  • To evaluate the electrical properties of graphite oxide, including leakage current and breakdown strength.
  • To compare graphite oxide's performance against conventional dielectric materials.

Main Methods:

  • Fabrication of field-effect transistors with single or bilayer graphene channels.
  • Utilized graphite oxide as the gate insulator layer.
  • Employed metal top-gates for transistor operation.
  • Measured leakage current at room temperature and determined breakdown electric field and dielectric constant.

Main Results:

  • Graphite oxide layers exhibited minimal current leakage at room temperature.
  • The breakdown electric field of graphite oxide was found to be approximately 1-3 × 10^8 V/m, comparable to SiO2.
  • The dielectric constant of graphite oxide was measured to be approximately 4.3.

Conclusions:

  • Graphite oxide is a viable ultrathin gate dielectric material for graphene-based transistors.
  • Its electrical properties are competitive with established dielectrics like SiO2.
  • This finding opens avenues for novel 2D electronic device architectures.